FQP6N90C TO-220 6A 900V 167W 2.3Ω N-CHANNEL MOSFET
FQP6N90C MOSFET
Type Designator: FQP6N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 167 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
Package: TO220
Ürün Bilgisi
FQP6N90C MOSFET
Type Designator: FQP6N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 167 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
Package: TO220