FQP70N10 TO-220 57A 100V 160W 0.023Ω N-CHANNEL MOSFET
FQP70N10 MOSFET
Type Designator: FQP70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 57 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 85 nC
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO220
Ürün Bilgisi
FQP70N10 MOSFET
Type Designator: FQP70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 57 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 85 nC
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO220