FQP85N06 TO-220 85A 60V 160W 0.01Ω N-CHANNEL MOSFET
FQP85N06 MOSFET
Type Designator: FQP85N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 85 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 86 nC
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220
Ürün Bilgisi
FQP85N06 MOSFET
Type Designator: FQP85N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 85 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 86 nC
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220