FQP8N60C TO-220 7.5A 600V 147W 1.2Ω N-CHANNEL MOSFET
FQP8N60C MOSFET
Type Designator: FQP8N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 147 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO220
Ürün Bilgisi
FQP8N60C MOSFET
Type Designator: FQP8N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 147 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO220