FQPF10N20C TO-220F 9.5A 200V 38W 0.36Ω N-CHANNEL MOSFET
FQPF10N20C MOSFET
Type Designator: FQPF10N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm
Package: TO220F
Ürün Bilgisi
FQPF10N20C MOSFET
Type Designator: FQPF10N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm
Package: TO220F