FQPF10N60C TO-220F 9.5A 600V 50W 0.73Ω N-CHANNEL MOSFET
FQPF10N60C
Type Designator: FQPF10N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V bu
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 57 nC
Maximum Drain-Source On-State Resistance (Rds): 0.73 Ohm
Package: TO220F
Ürün Bilgisi
FQPF10N60C
Type Designator: FQPF10N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V bu
Maximum Drain Current |Id|: 9.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 57 nC
Maximum Drain-Source On-State Resistance (Rds): 0.73 Ohm
Package: TO220F