FQPF33N10 TO-220F 18A 100V N-CHANNEL MOSFET TRANSISTOR
FQPF33N10
Type Designator: FQPF33N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 41 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 38 nC
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: TO220F
Ürün Bilgisi
FQPF33N10
Type Designator: FQPF33N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 41 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 38 nC
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: TO220F