FQPF6N60C TO-220F 5.5A 600V 40W 2.0Ω N-CHANNEL MOSFET
FQPF6N60C MOSFET
Type Designator: FQPF6N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO-220F
Ürün Bilgisi
FQPF6N60C MOSFET
Type Designator: FQPF6N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO-220F