FQPF7N80C TO-220F 6.6A 800V 56W 1.9Ω N-CHANNEL MOSFET
FQPF7N80C MOSFET
Type Designator: FQPF7N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 27 nC
Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm
Package: TO220F
Ürün Bilgisi
FQPF7N80C MOSFET
Type Designator: FQPF7N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 27 nC
Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm
Package: TO220F