FQPF9N50C TO-220F 9A 500V 135W 0.8Ω N-CHANNEL MOSFET
FQPF9N50C MOSFET
Type Designator: FQPF9N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Rise Time (tr): 65 nS
Drain-Source Capacitance (Cd): 130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO220F
Ürün Bilgisi
FQPF9N50C MOSFET
Type Designator: FQPF9N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Rise Time (tr): 65 nS
Drain-Source Capacitance (Cd): 130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO220F