GT60M104 TO-3PL 60A 900V 200W IGBT TRANSISTOR
₺392,49 + KDV
6 Adet Stokta var, şimdi sipariş ver hemen kargoda
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Stok Kodu
GT60M104, 60M104 TO3PL 900V 60A 200W Silicon N-Channel IGBT Gate Bipolar Transistor-TOSHIBA
Fiyat
8,90 USD + KDV
*43,79 TL den başlayan taksitlerle!
GT60M104 TO-3PL 60A 900V 200W IGBT TRANSISTOR
GT60M104
Type Designator: GT60M104
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 200
Maximum Collector-Emitter Voltage |Vce|, V: 900
Collector-Emitter saturation Voltage |Vcesat|, V: 2.4
Maximum Gate-Emitter Voltage |Veg|, V: 25
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Package: 2-21F2C
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GT60M104 TO-3PL 60A 900V 200W IGBT TRANSISTOR
GT60M104
Type Designator: GT60M104
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 200
Maximum Collector-Emitter Voltage |Vce|, V: 900
Collector-Emitter saturation Voltage |Vcesat|, V: 2.4
Maximum Gate-Emitter Voltage |Veg|, V: 25
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Package: 2-21F2C
GT60M104 TO-3PL 60A 900V 200W IGBT TRANSISTOR
₺392 + KDV