GT60N321 TO-3PL 60A 1000V IGBT TRANSISTOR
₺341,47 + KDV
6 Adet Stokta var, şimdi sipariş ver hemen kargoda
Stok Kodu
GT60N321, 60N321, GT60N321(Q) TO3PL 1000V 60A N-Channel IGBT Gate Bipolar Transistor-TOSHIBA
Fiyat
341,47 TL + KDV
*38,10 TL den başlayan taksitlerle!
GT60N321 TO-3PL 60A 1000V IGBT TRANSISTOR
GT60N321
Type Designator: GT60N321
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 170
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Collector-Emitter saturation Voltage |Vcesat|, V: 1.6
Maximum Gate-Emitter Voltage |Veg|, V: 25
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Package: 2-21F2C
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Ürün Bilgisi
GT60N321 TO-3PL 60A 1000V IGBT TRANSISTOR
GT60N321
Type Designator: GT60N321
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 170
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Collector-Emitter saturation Voltage |Vcesat|, V: 1.6
Maximum Gate-Emitter Voltage |Veg|, V: 25
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Package: 2-21F2C
GT60N321 TO-3PL 60A 1000V IGBT TRANSISTOR
₺341 + KDV