HGT1S7N60A4DS TO-263 34A 600V 125W IGBT TRANSISTOR
HGT1S7N60A4DS IGBT
Type Designator: HGT1S7N60A4DS
Type: IGBT + Anti-Parallel Diode
Marking Code: G7N60A4D
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 125
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 34
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum G-E Threshold Voltag |VGE(th)|, V: 7(typ)
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 11
Total Gate Charge (Qg), typ, nC: 37
Package: TO263
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HGT1S7N60A4DS IGBT
Type Designator: HGT1S7N60A4DS
Type: IGBT + Anti-Parallel Diode
Marking Code: G7N60A4D
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 125
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 34
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
Maximum G-E Threshold Voltag |VGE(th)|, V: 7(typ)
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 11
Total Gate Charge (Qg), typ, nC: 37
Package: TO263