HY1403D MOSFET

Type Designator: HY1403D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 29 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 251 pF

Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm

Package: TO252