HY1607P TO-220 70A 68V 160W 7MOHM N-CHANNEL MOSFET
HY1607P MOSFET
ÂaââaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaqaaaaaaaaaaaaaaaaaaaaaaaqqqaaaqaaaaaaaaaaaaaaaaaaaaaâaaÂâaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaqaaaqqaaqaaqqaaa Designator: HY1607P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 68 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO-220
Ürün Bilgisi
HY1607P MOSFET
ÂaââaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaqaaaaaaaaaaaaaaaaaaaaaaaqqqaaaqaaaaaaaaaaaaaaaaaaaaaâaaÂâaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaqaaaqqaaqaaqqaaa Designator: HY1607P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 68 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO-220