HY3007P TO-220 120A 68V 200W 0.007OHM N-CHANNEL MOSFET
HY3007P MOSFET
Type Designator: HY3007P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 68 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 76 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 920 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO220
Ürün Bilgisi
HY3007P MOSFET
Type Designator: HY3007P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 68 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 76 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 920 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO220