HY3210P TO-220 120A 100V 237W 0.0085Ω N-CHANNEL MOSFET
HY3210P MOSFET
Type Designator: HY3210P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 237 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 902 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO220FB
Ürün Bilgisi
HY3210P MOSFET
Type Designator: HY3210P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 237 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 902 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO220FB