HY3810P - (HY3810NA2P) TO-220 180A 100V 6.5mΩ N-CHANNEL MOSFET
HY3810
Type Designator: HY3810P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 346 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 185 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 1013 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO-220
Ürün Bilgisi
HY3810
Type Designator: HY3810P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 346 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 185 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 1013 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO-220