HY5012W TO-247 125V 300A 500W NPN MOSFET
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 352 nC
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 1570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO247
Ürün Bilgisi
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 352 nC
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 1570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO247