IGB50N65S5 TO-263 80A-650V 270W N-Channel IGBT
₺355,91 + KDV
57 Adet Stokta var, şimdi sipariş ver hemen kargoda
Kategori
Stok Kodu
TR10036
Fiyat
355,91 TL + KDV
*39,71 TL den başlayan taksitlerle!
IGB50N65S5 TO-263 80A-650V 270W N-Channel IGBT
Marking Code: G50ES5
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qg ⓘ - Total Gate Charge, typ: 120 nC
Package: TO263
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Ürün Bilgisi
IGB50N65S5 TO-263 80A-650V 270W N-Channel IGBT
Marking Code: G50ES5
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qg ⓘ - Total Gate Charge, typ: 120 nC
Package: TO263
IGB50N65S5 TO-263 80A-650V 270W N-Channel IGBT
₺356 + KDV