IKW40N120CS6 - (K40MCS6) TO-247 80A 1200V 500W IGBT TRANSISTOR
IKW40N120CS6 IGBT
Type Designator: IKW40N120CS6
Type: IGBT + Anti-Parallel Diode
Marking Code: K40MCS6
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 500
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 39
Collector Capacity (Cc), typ, pF: 185
Total Gate Charge (Qg), typ, nC: 285
Package: TO247
Ürün Bilgisi
IKW40N120CS6 IGBT
Type Designator: IKW40N120CS6
Type: IGBT + Anti-Parallel Diode
Marking Code: K40MCS6
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 500
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 39
Collector Capacity (Cc), typ, pF: 185
Total Gate Charge (Qg), typ, nC: 285
Package: TO247