IPA60R180P7S - (60S180P7) TO-220F 18A 600V 26W 0.18OHM N-CHANNEL MOSFET
IPA60R180P7S MOSFET
Type Designator: IPA60R180P7S
Marking Code: 60S180P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 26 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 19 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220FP
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IPA60R180P7S MOSFET
Type Designator: IPA60R180P7S
Marking Code: 60S180P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 26 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 19 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220FP