IPA65S1K5CE - (65S1K5CE) TO-220F 5.2A 650V N-CHANNEL MOSFET
IPA65R1K5CE
Type Designator: IPA65R1K5CE
Marking Code: 65S1K5CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 5.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10.5 nC
Rise Time (tr): 5.9 nS
Drain-Source Capacitance (Cd): 18 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO220FP
Ürün Bilgisi
IPA65R1K5CE
Type Designator: IPA65R1K5CE
Marking Code: 65S1K5CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 5.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10.5 nC
Rise Time (tr): 5.9 nS
Drain-Source Capacitance (Cd): 18 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO220FP