IPB019N08N3G TO-263-7 80A 180V N-CHANNEL MOSFET
IPB019N08N3G
Type Designator: IPB019N08N3G
Marking Code: 019N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 155 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 2890 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0019 Ohm
Package: TO263-7
Ürün Bilgisi
IPB019N08N3G
Type Designator: IPB019N08N3G
Marking Code: 019N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 155 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 2890 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0019 Ohm
Package: TO263-7