IPB160N04S4-H1 - (4N04H1) TO-263 160A 40V 167W 1.6mΩ N-CHANNEL MOSFET
IPB160N04S4-H1 MOSFET
Type Designator: IPB160N04S4-H1
Marking Code: 4N04H1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 167 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 160 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 105 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 1800 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0016 Ohm
Package: TO263-7
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IPB160N04S4-H1 MOSFET
Type Designator: IPB160N04S4-H1
Marking Code: 4N04H1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 167 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 160 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 105 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 1800 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0016 Ohm
Package: TO263-7