IPD70R360P7S - (IPD70S360P7) TO-252 700V 12.5A N-CHANNEL MOSFET TRANSISTOR
IPD70R360P7S
Type Designator: IPD70R360P7S
Marking Code: 70S360P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 59.5 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 12.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16.4 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 11 pF
Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm
Package: TO252
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IPD70R360P7S
Type Designator: IPD70R360P7S
Marking Code: 70S360P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 59.5 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 12.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16.4 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 11 pF
Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm
Package: TO252