IPP100N06S2L-05 - (PN06L05) TO-220 100A 55V 300W 4.4mΩ N-CHANNEL MOSFET
IPP100N06S2L-05 MOSFET
Type Designator: IPP100N06S2L-05
Marking Code: PN06L05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 170 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 1330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0047 Ohm
Package: TO220
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IPP100N06S2L-05 MOSFET
Type Designator: IPP100N06S2L-05
Marking Code: PN06L05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 170 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 1330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0047 Ohm
Package: TO220