IPP320N20N3G TO-220 34A 200V 32mΩ N-CHANNEL MOSFET
IPP320N20N3G MOSFET
Type Designator: IPP320N20N3G
Marking Code: 320N20N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 136 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 135 pF
Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm
Package: TO220
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IPP320N20N3G MOSFET
Type Designator: IPP320N20N3G
Marking Code: 320N20N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 136 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 135 pF
Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm
Package: TO220