IPP60R099C6 - (6R099C6) TO-220 37.9A 600V MOSFET
IPP60R099C6 MOSFET
Type Designator: IPP60R099C6
Marking Code: 6R099C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 278 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 37.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 119 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 154 pF
Maximum Drain-Source On-State Resistance (Rds): 0.099 Ohm
Package: TO220
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IPP60R099C6 MOSFET
Type Designator: IPP60R099C6
Marking Code: 6R099C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 278 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 37.9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 119 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 154 pF
Maximum Drain-Source On-State Resistance (Rds): 0.099 Ohm
Package: TO220