IPP60R160C6 - (6R160C6) TO-220 23.8A 600V MOSFET
IPP60R160C6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP60R160C6
Marking Code: 6R160C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 176 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 23.8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO220
Ürün Bilgisi
IPP60R160C6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP60R160C6
Marking Code: 6R160C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 176 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 23.8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
Package: TO220