IPP60R190C6 - (6R190C6) TO-220 20.2A 600V 151W 0.19Ω N-CHANNEL MOSFET
IPP60R190C6
Type Designator: IPP60R190C6
Marking Code: 6R190C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 151 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 20.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 63 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO220
Ürün Bilgisi
IPP60R190C6
Type Designator: IPP60R190C6
Marking Code: 6R190C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 151 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 20.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 63 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO220