IPP60R199CP - (6R199P) TO-220 16A 650V 0.199Ω N-CHANNEL MOSFET
IPP60R199CP MOSFET
Type Designator: IPP60R199CP
Marking Code: 6R199P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 139 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 72 pF
Maximum Drain-Source On-State Resistance (Rds): 0.199 Ohm
Package: TO220
Ürün Bilgisi
IPP60R199CP MOSFET
Type Designator: IPP60R199CP
Marking Code: 6R199P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 139 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 72 pF
Maximum Drain-Source On-State Resistance (Rds): 0.199 Ohm
Package: TO220