IRF1010EPBF TO-220 84A 60V 12mΩ N-CHANNEL POWER MOSFET
IRF1010E MOSFET
Type Designator: IRF1010E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 84 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 130(max) nC
Rise Time (tr): 78 nS
Drain-Source Capacitance (Cd): 690 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO220AB
Ürün Bilgisi
IRF1010E MOSFET
Type Designator: IRF1010E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 84 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 130(max) nC
Rise Time (tr): 78 nS
Drain-Source Capacitance (Cd): 690 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO220AB