IRF1310NPBF TO-220AB 42A 100V MOSFET
IRF1310N MOSFET. Datasheet
Type Designator: IRF1310N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 73.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm
Package: TO220AB
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IRF1310N MOSFET. Datasheet
Type Designator: IRF1310N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 73.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm
Package: TO220AB