IRF3709ZS TO-263 87A 30V 79W 0.0063OHM N-CHANNEL MOSFET
IRF3709ZS MOSFET
Type Designator: IRF3709ZS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 79 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.25 V
Maximum Drain Current |Id|: 87 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 41 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0063 Ohm
Package: TO263
Ürün Bilgisi
IRF3709ZS MOSFET
Type Designator: IRF3709ZS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 79 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.25 V
Maximum Drain Current |Id|: 87 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 41 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0063 Ohm
Package: TO263