IRF610 3.3A 200V TO-220 MOSFET
IRF610 MOSFET
Type Designator: IRF610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.2 nC
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO220AB
Ürün Bilgisi
IRF610 MOSFET
Type Designator: IRF610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.2 nC
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO220AB