IRF6644TRPBF DirectFET-MN 10.3A 100V 2.8W 0.013OHM N-CHANNEL MOSFET
IRF6644 MOSFET
Type Designator: IRF6644
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.8 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.8 V
Maximum Drain Current |Id|: 10.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 35 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: DIRECTFETÜrün Bilgisi
IRF6644 MOSFET
Type Designator: IRF6644
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.8 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.8 V
Maximum Drain Current |Id|: 10.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 35 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: DIRECTFET