IRF7910 12V 10A SMD SO-8 MOSFET
IRF7910 MOSFET
Type Designator: IRF7910
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 1340 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: SO8
Ürün Bilgisi
IRF7910 MOSFET
Type Designator: IRF7910
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 1340 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: SO8