IRF8010PBF TO-220 80A 100V 15mOHM 81nC N-CHANNEL MOSFET
IRF8010PBF MOSFET
Type Designator: IRF8010PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 260 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 81 nC
Rise Time (tr): 130 nS
Drain-Source Capacitance (Cd): 480 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO-220AB
Ürün Bilgisi
IRF8010PBF MOSFET
Type Designator: IRF8010PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 260 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 81 nC
Rise Time (tr): 130 nS
Drain-Source Capacitance (Cd): 480 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO-220AB