IRF820 TO-220 2.5A 500V 50W N-CHANNEL MOSFET
IRF820 MOSFET
Type Designator: IRF820
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 24 nC
Drain-Source Capacitance (Cd): 460 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220
Ürün Bilgisi
IRF820 MOSFET
Type Designator: IRF820
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 24 nC
Drain-Source Capacitance (Cd): 460 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220