IRFB31N20DPBF TO-220 31A 200V N-CHANNEL MOSFET
IRFB31N20DPBF
Type Designator: IRFB31N20DPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 38 nS
Drain-Source Capacitance (Cd): 390 pF
Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
Package: TO-220AB
Ürün Bilgisi
IRFB31N20DPBF
Type Designator: IRFB31N20DPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 38 nS
Drain-Source Capacitance (Cd): 390 pF
Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
Package: TO-220AB