IRFB11N50APBF 11A 500V TO-220 MOSFET
IRFB11N50APBF MOSFET
Type Designator: IRFB11N50APBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 170 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 52 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 208 pF
Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm
Package: TO-220
Ürün Bilgisi
IRFB11N50APBF MOSFET
Type Designator: IRFB11N50APBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 170 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 52 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 208 pF
Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm
Package: TO-220