IRFB9N60APBF TO-220 9.2A 600V 170W 0.75OHM N-CHANNEL MOSFET
IRFB9N60APBF
Type Designator: IRFB9N60APBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 170 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 49 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO-220AB
Ürün Bilgisi
IRFB9N60APBF
Type Designator: IRFB9N60APBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 170 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 49 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO-220AB