IRFBG30PBF TO-220 3.1A 1000V N-CHANNEL MOSFET
IRFBG30PBF
Type Designator: IRFBG30PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO-220AB
Ürün Bilgisi
IRFBG30PBF
Type Designator: IRFBG30PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO-220AB