IRFD110PBF 100V 1A DIP-4 MOSFET
IRFD110PBF MOSFET
Type Designator: IRFD110PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 8.3 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 81 pF
Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm
Package: DIP-4
Ürün Bilgisi
IRFD110PBF MOSFET
Type Designator: IRFD110PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 8.3 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 81 pF
Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm
Package: DIP-4