IRFD9120 HVMDIP-4 1A 100V 1.3W P-CHANNEL MOSFET
IRFD9120 MOSFET
Type Designator: IRFD9120
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 18 nC
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Ürün Bilgisi
IRFD9120 MOSFET
Type Designator: IRFD9120
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 18 nC
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm