IRFI620G TO-220F 200V 4.1A MOSFET
IRFI620G MOSFET
Type Designator: IRFI620G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 14 nC
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO220
Ürün Bilgisi
IRFI620G MOSFET
Type Designator: IRFI620G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 14 nC
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO220