IRFIBE30GPBF TO-220F 800V 2.1A MOSFET
IRFIBE30G MOSFET
Type Designator: IRFIBE30G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 78 nC
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220
Ürün Bilgisi
IRFIBE30G MOSFET
Type Designator: IRFIBE30G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 78 nC
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: TO220