IRFP4668PBF TO-247 200V 130A MOSFET
IRFP4668PBF
Type Designator: IRFP4668PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 520 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 241 nC
Rise Time (tr): 105 nS
Drain-Source Capacitance (Cd): 810 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
Package: TO247AC
Ürün Bilgisi
IRFP4668PBF
Type Designator: IRFP4668PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 520 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 241 nC
Rise Time (tr): 105 nS
Drain-Source Capacitance (Cd): 810 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
Package: TO247AC