IRFPG50PBF TO-247 1000V 6.1A MOSFET
IRFPG50PBF
Type Designator: IRFPG50PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 190 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO-247AC
Ürün Bilgisi
IRFPG50PBF
Type Designator: IRFPG50PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 190 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 250 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO-247AC